HN1B01FU-GR,LF Pagpepresyo (USD) [1548880pcs Stock]
- 1 pcs$0.02400
- 3,000 pcs$0.02388
- Bilang ng Bahagi:
- HN1B01FU-GR,LF
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS NPN/PNP 50V 0.15A US6-PLN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Programmable Unijunction, Diode - RF and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage HN1B01FU-GR,LF electronic components. HN1B01FU-GR,LF can be shipped within 24 hours after order. If you have any demands for HN1B01FU-GR,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN1B01FU-GR,LF Mga katangian ng produkto
Bilang ng Bahagi :
HN1B01FU-GR,LF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS NPN/PNP 50V 0.15A US6-PLN
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
NPN, PNP
Kasalukuyang - Kolektor (Ic) (Max) :
150mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Kapangyarihan - Max :
200mW, 210mW
Dalas - Paglilipat :
150MHz
Temperatura ng pagpapatakbo :
125°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device :
US6
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