RJK6012DPE-00#J3 Pagpepresyo (USD) [2176pcs Stock]
- 1,000 pcs$0.67884
- Bilang ng Bahagi:
- RJK6012DPE-00#J3
- Tagagawa:
- Renesas Electronics America
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 10A LDPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Mga Transistor - JFET, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays, Mga Transistor - FET, MOSFET - RF, Diode - RF, Diode - Mga Rectifier ng Bridge and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Renesas Electronics America RJK6012DPE-00#J3 electronic components. RJK6012DPE-00#J3 can be shipped within 24 hours after order. If you have any demands for RJK6012DPE-00#J3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK6012DPE-00#J3 Mga katangian ng produkto
Bilang ng Bahagi :
RJK6012DPE-00#J3
Tagagawa :
Renesas Electronics America
Paglalarawan :
MOSFET N-CH 600V 10A LDPAK
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
920 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
100W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
4-LDPAK
Pakete / Kaso :
SC-83
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