[4005pcs Stock]
- Bilang ng Bahagi:
- EGF1B-1HE3/67A
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 100V 1A DO214BA.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga SCR, Diode - Rectifiers - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division EGF1B-1HE3/67A electronic components. EGF1B-1HE3/67A can be shipped within 24 hours after order. If you have any demands for EGF1B-1HE3/67A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGF1B-1HE3/67A Mga katangian ng produkto
Bilang ng Bahagi :
EGF1B-1HE3/67A
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 100V 1A DO214BA
Serye :
Automotive, AEC-Q101, Superectifier®
Katayuan ng Bahagi :
Discontinued at Digi-Key
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
100V
Kasalukuyang - Average na Rectified (Io) :
1A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1V @ 1A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
15pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-214BA
Package ng Tagabigay ng Device :
DO-214BA (GF1)
Operating temperatura - Junction :
-65°C ~ 175°C
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