Bilang ng Bahagi :
SCT10N120
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 1.2KV TO247-3
Katayuan ng Bahagi :
Active
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
690 mOhm @ 6A, 20V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 400V
Power Dissipation (Max) :
150W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 200°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
HiP247™