Toshiba Semiconductor and Storage - CUHS20S30,H3F

KEY Part #: K6431467

CUHS20S30,H3F Pagpepresyo (USD) [736098pcs Stock]

  • 1 pcs$0.05025

Bilang ng Bahagi:
CUHS20S30,H3F
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
SCHOTTKY BARRIER DIODE LOW VF. Schottky Diodes & Rectifiers Sml-Signal Schottky 2A 30V 390pF
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Diode - Rectifiers - Single, Diode - Zener - Single, Mga Transistor - JFET, Mga Transistor - Bipolar (BJT) - RF and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage CUHS20S30,H3F electronic components. CUHS20S30,H3F can be shipped within 24 hours after order. If you have any demands for CUHS20S30,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CUHS20S30,H3F Mga katangian ng produkto

Bilang ng Bahagi : CUHS20S30,H3F
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : SCHOTTKY BARRIER DIODE LOW VF
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Schottky
Boltahe - DC Reverse (Vr) (Max) : 30V
Kasalukuyang - Average na Rectified (Io) : 2A
Boltahe - Ipasa (Vf) (Max) @ Kung : 410mV @ 2A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 500µA @ 30V
Capacitance @ Vr, F : 390pF @ 0V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 2-SMD, Flat Lead
Package ng Tagabigay ng Device : US2H
Operating temperatura - Junction : 150°C (Max)

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