MJD112T4G Pagpepresyo (USD) [371971pcs Stock]
- 1 pcs$0.09944
- 2,500 pcs$0.09314
- 5,000 pcs$0.08713
- 12,500 pcs$0.08112
- Bilang ng Bahagi:
- MJD112T4G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- TRANS NPN DARL 100V 2A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Diode - Zener - Single, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Mga Transistor - Bipolar (BJT) - RF, Mga module ng Power driver, Diode - RF and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor MJD112T4G electronic components. MJD112T4G can be shipped within 24 hours after order. If you have any demands for MJD112T4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MJD112T4G Mga katangian ng produkto
Bilang ng Bahagi :
MJD112T4G
Tagagawa :
ON Semiconductor
Paglalarawan :
TRANS NPN DARL 100V 2A DPAK
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
NPN - Darlington
Kasalukuyang - Kolektor (Ic) (Max) :
2A
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
100V
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
Kasalukuyang - Collector Cutoff (Max) :
20µA
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
1000 @ 2A, 3V
Kapangyarihan - Max :
20W
Dalas - Paglilipat :
25MHz
Temperatura ng pagpapatakbo :
-65°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
Package ng Tagabigay ng Device :
DPAK
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