Toshiba Semiconductor and Storage - HN1D04FUTE85LF

KEY Part #: K6474867

HN1D04FUTE85LF Pagpepresyo (USD) [6294pcs Stock]

  • 3,000 pcs$0.03322

Bilang ng Bahagi:
HN1D04FUTE85LF
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
DIODE ARRAY GP 80V 100MA US6.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver, Thyristors - SCR - Mga Module, Transistor - IGBTs - Arrays, Transistor - Programmable Unijunction, Transistor - Mga FET, MOSFET - Arrays and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage HN1D04FUTE85LF electronic components. HN1D04FUTE85LF can be shipped within 24 hours after order. If you have any demands for HN1D04FUTE85LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN1D04FUTE85LF Mga katangian ng produkto

Bilang ng Bahagi : HN1D04FUTE85LF
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : DIODE ARRAY GP 80V 100MA US6
Serye : -
Katayuan ng Bahagi : Active
Pag-configure ng Diode : 2 Pair Series Connection
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 80V
Kasalukuyang - Average Rectified (Io) (bawat Diode) : 100mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.2V @ 100mA
Bilis : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 1.6ns
Kasalukuyang - Reverse Leakage @ Vr : 500nA @ 80V
Operating temperatura - Junction : 150°C (Max)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device : US6

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