Vishay Semiconductor Diodes Division - BYW29-100801HE3/45

KEY Part #: K6436418

[5195pcs Stock]


    Bilang ng Bahagi:
    BYW29-100801HE3/45
    Tagagawa:
    Vishay Semiconductor Diodes Division
    Detalyadong Paglalarawan:
    DIODE ARRAY GP TO220AC.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - RF, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga module ng Power driver, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single and Transistor - IGBTs - Arrays ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Semiconductor Diodes Division BYW29-100801HE3/45 electronic components. BYW29-100801HE3/45 can be shipped within 24 hours after order. If you have any demands for BYW29-100801HE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BYW29-100801HE3/45 Mga katangian ng produkto

    Bilang ng Bahagi : BYW29-100801HE3/45
    Tagagawa : Vishay Semiconductor Diodes Division
    Paglalarawan : DIODE ARRAY GP TO220AC
    Serye : Automotive, AEC-Q101
    Katayuan ng Bahagi : Obsolete
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 100V
    Kasalukuyang - Average na Rectified (Io) : 8A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1.3V @ 20A
    Bilis : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 25ns
    Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 100V
    Capacitance @ Vr, F : 45pF @ 4V, 1MHz
    Uri ng Pag-mount : Through Hole
    Pakete / Kaso : TO-220-2
    Package ng Tagabigay ng Device : TO-220AC
    Operating temperatura - Junction : -65°C ~ 150°C

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