[1948pcs Stock]
- Bilang ng Bahagi:
- RN1910FE(T5L,F,T)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS 2NPN PREBIAS 0.1W ES6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Mga Module, Transistor - Espesyal na Pakay, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Arrays and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage RN1910FE(T5L,F,T) electronic components. RN1910FE(T5L,F,T) can be shipped within 24 hours after order. If you have any demands for RN1910FE(T5L,F,T), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1910FE(T5L,F,T) Mga katangian ng produkto
Bilang ng Bahagi :
RN1910FE(T5L,F,T)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS 2NPN PREBIAS 0.1W ES6
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
2 NPN - Pre-Biased (Dual)
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
-
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
Dalas - Paglilipat :
250MHz
Kapangyarihan - Max :
100mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-563, SOT-666
Package ng Tagabigay ng Device :
ES6
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