IRFL014NPBF Pagpepresyo (USD) [13771pcs Stock]
- 80 pcs$0.23789
- Bilang ng Bahagi:
- IRFL014NPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 55V 1.9A SOT223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Espesyal na Pakay, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Single, Thyristors - Mga SCR and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFL014NPBF electronic components. IRFL014NPBF can be shipped within 24 hours after order. If you have any demands for IRFL014NPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFL014NPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFL014NPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 55V 1.9A SOT223
Serye :
HEXFET®
Katayuan ng Bahagi :
Discontinued at Digi-Key
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.9A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
160 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-223
Pakete / Kaso :
TO-261-4, TO-261AA
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