BSC036NE7NS3GATMA1 Pagpepresyo (USD) [59124pcs Stock]
- 1 pcs$0.66133
- 5,000 pcs$0.60676
- Bilang ng Bahagi:
- BSC036NE7NS3GATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 75V 100A TDSON-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Arrays, Diode - Rectifiers - Single and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSC036NE7NS3GATMA1 electronic components. BSC036NE7NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSC036NE7NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC036NE7NS3GATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSC036NE7NS3GATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 75V 100A TDSON-8
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
75V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.6 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 110µA
Gate Charge (Qg) (Max) @ Vgs :
63.4nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 37.5V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta), 156W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TDSON-8
Pakete / Kaso :
8-PowerTDFN
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