Vishay Semiconductor Diodes Division - VS-10ETF12STRLPBF

KEY Part #: K6443059

VS-10ETF12STRLPBF Pagpepresyo (USD) [2920pcs Stock]

  • 800 pcs$0.75212

Bilang ng Bahagi:
VS-10ETF12STRLPBF
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 1.2KV 10A TO263AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - RF, Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Single, Transistor - Espesyal na Pakay and Transistor - IGBTs - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division VS-10ETF12STRLPBF electronic components. VS-10ETF12STRLPBF can be shipped within 24 hours after order. If you have any demands for VS-10ETF12STRLPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-10ETF12STRLPBF Mga katangian ng produkto

Bilang ng Bahagi : VS-10ETF12STRLPBF
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 1.2KV 10A TO263AB
Serye : -
Katayuan ng Bahagi : Discontinued at Digi-Key
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 1200V
Kasalukuyang - Average na Rectified (Io) : 10A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.33V @ 10A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 310ns
Kasalukuyang - Reverse Leakage @ Vr : 100µA @ 1200V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device : TO-263AB (D²PAK)
Operating temperatura - Junction : -40°C ~ 150°C

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