[1513pcs Stock]
- Bilang ng Bahagi:
- IRFH5215TR2PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 150V 5.0A PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Mga FET, MOSFET - Arrays, Transistors - IGBTs - Single, Thyristors - Mga SCR, Thyristors - Mga TRIAC, Diode - Zener - Single, Mga Transistor - FET, MOSFET - RF and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFH5215TR2PBF electronic components. IRFH5215TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH5215TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5215TR2PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFH5215TR2PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 150V 5.0A PQFN
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
150V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5A (Ta), 27A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
58 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
3.6W (Ta), 104W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PQFN (5x6)
Pakete / Kaso :
8-VQFN Exposed Pad
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