IPB029N06N3GE8187ATMA1 Pagpepresyo (USD) [87643pcs Stock]
- 1 pcs$0.44837
- 1,000 pcs$0.44614
- Bilang ng Bahagi:
- IPB029N06N3GE8187ATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 120A TO263-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - IGBTs - Arrays, Diode - RF, Thyristors - Mga TRIAC, Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Diode - Zener - Single and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPB029N06N3GE8187ATMA1 electronic components. IPB029N06N3GE8187ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB029N06N3GE8187ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB029N06N3GE8187ATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPB029N06N3GE8187ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 60V 120A TO263-3
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.2 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
13000pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
188W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D²PAK (TO-263AB)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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