HS1DL R3G Pagpepresyo (USD) [1102456pcs Stock]
- 1 pcs$0.03355
- Bilang ng Bahagi:
- HS1DL R3G
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 200V 1A SUB SMA. Rectifiers 1A 200V SUPER FAST SMT
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCR - Mga Module, Diode - Rectifiers - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Arrays and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation HS1DL R3G electronic components. HS1DL R3G can be shipped within 24 hours after order. If you have any demands for HS1DL R3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HS1DL R3G Mga katangian ng produkto
Bilang ng Bahagi :
HS1DL R3G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
DIODE GEN PURP 200V 1A SUB SMA
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
200V
Kasalukuyang - Average na Rectified (Io) :
1A
Boltahe - Ipasa (Vf) (Max) @ Kung :
950mV @ 1A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 200V
Capacitance @ Vr, F :
20pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-219AB
Package ng Tagabigay ng Device :
Sub SMA
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
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