Bilang ng Bahagi :
SSM6J512NU,LF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET P-CH 12V 10A UDFN6B
Katayuan ng Bahagi :
Active
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.8V, 8V
Rds On (Max) @ Id, Vgs :
16.2 mOhm @ 4A, 8V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
19.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 6V
Power Dissipation (Max) :
1.25W (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
6-UDFNB (2x2)
Pakete / Kaso :
6-WDFN Exposed Pad