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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  1. Bahay
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  5. FDMD8900

ON Semiconductor - FDMD8900

KEY Part #: K6522237

FDMD8900 Pagpepresyo (USD) [96560pcs Stock]

  • 1 pcs$0.40696
  • 3,000 pcs$0.40494
Bilang ng Bahagi:
FDMD8900
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET 2N-CH 30V POWER.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistors - IGBTs - Single, Thyristors - SCR - Mga Module, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF and Transistor - IGBTs - Arrays ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FDMD8900 electronic components. FDMD8900 can be shipped within 24 hours after order. If you have any demands for FDMD8900, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMD8900 Mga katangian ng produkto

Bilang ng Bahagi : FDMD8900
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET 2N-CH 30V POWER
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 19A, 17A
Rds On (Max) @ Id, Vgs : 4 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 2605pF @ 15V
Kapangyarihan - Max : 2.1W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 12-PowerWDFN
Package ng Tagabigay ng Device : 12-Power3.3x5

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