JANTXV1N6629US Pagpepresyo (USD) [3501pcs Stock]
- 1 pcs$13.67618
- 100 pcs$13.60814
- Bilang ng Bahagi:
- JANTXV1N6629US
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 800V 1.4A D5B. Rectifiers Rectifier
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - JFET, Transistor - IGBTs - Mga Module, Diode - Zener - Single, Diode - Rectifiers - Arrays, Diode - RF and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation JANTXV1N6629US electronic components. JANTXV1N6629US can be shipped within 24 hours after order. If you have any demands for JANTXV1N6629US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JANTXV1N6629US Mga katangian ng produkto
Bilang ng Bahagi :
JANTXV1N6629US
Tagagawa :
Microsemi Corporation
Paglalarawan :
DIODE GEN PURP 800V 1.4A D5B
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
800V
Kasalukuyang - Average na Rectified (Io) :
1.4A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.4V @ 1.4A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
60ns
Kasalukuyang - Reverse Leakage @ Vr :
2µA @ 800V
Capacitance @ Vr, F :
40pF @ 10V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SQ-MELF, E
Package ng Tagabigay ng Device :
D-5B
Operating temperatura - Junction :
-65°C ~ 150°C
Pinakabagong Balita
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RURD660S9A-F085
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-
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VS-8EWL06FN-M3
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DIODE GEN PURP 600V 8A TO252AA. Rectifiers 8A 600V 60ns Hyperfast
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