[12693pcs Stock]
- Bilang ng Bahagi:
- IRFB41N15D
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 150V 41A TO-220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Single and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFB41N15D electronic components. IRFB41N15D can be shipped within 24 hours after order. If you have any demands for IRFB41N15D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB41N15D Mga katangian ng produkto
Bilang ng Bahagi :
IRFB41N15D
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 150V 41A TO-220AB
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
150V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
41A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
45 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2520pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
200W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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