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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  5. 1N8030-GA

GeneSiC Semiconductor - 1N8030-GA

KEY Part #: K6428136

1N8030-GA Pagpepresyo (USD) [488pcs Stock]

  • 1 pcs$89.56064
  • 10 pcs$85.23848
  • 25 pcs$82.15037
Bilang ng Bahagi:
1N8030-GA
Tagagawa:
GeneSiC Semiconductor
Detalyadong Paglalarawan:
DIODE SCHOTTKY 650V 750MA TO257.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Thyristors - DIACs, SIDACs, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Thyristors - SCR - Mga Module and Transistor - Programmable Unijunction ...
Kumpetensyang Pakinabang:
We specialize in GeneSiC Semiconductor 1N8030-GA electronic components. 1N8030-GA can be shipped within 24 hours after order. If you have any demands for 1N8030-GA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N8030-GA Mga katangian ng produkto

Bilang ng Bahagi : 1N8030-GA
Tagagawa : GeneSiC Semiconductor
Paglalarawan : DIODE SCHOTTKY 650V 750MA TO257
Serye : -
Katayuan ng Bahagi : Obsolete
Uri ng Diode : Silicon Carbide Schottky
Boltahe - DC Reverse (Vr) (Max) : 650V
Kasalukuyang - Average na Rectified (Io) : 750mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.39V @ 750mA
Bilis : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-257-3
Package ng Tagabigay ng Device : TO-257
Operating temperatura - Junction : -55°C ~ 250°C
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