Toshiba Semiconductor and Storage - TPH6400ENH,L1Q

KEY Part #: K6416895

TPH6400ENH,L1Q Pagpepresyo (USD) [131756pcs Stock]

  • 1 pcs$0.28818
  • 5,000 pcs$0.28674

Bilang ng Bahagi:
TPH6400ENH,L1Q
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET N-CH 200V 21A 8-SOP.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Programmable Unijunction, Thyristors - SCR - Mga Module, Diode - Rectifiers - Arrays, Diode - Zener - Arrays, Mga Transistor - JFET, Mga Transistor - Bipolar (BJT) - RF and Transistor - Mga FET, MOSFET - Single ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage TPH6400ENH,L1Q electronic components. TPH6400ENH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH6400ENH,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPH6400ENH,L1Q Mga katangian ng produkto

Bilang ng Bahagi : TPH6400ENH,L1Q
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET N-CH 200V 21A 8-SOP
Serye : U-MOSVIII-H
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 13A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 64 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 11.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 1.6W (Ta), 57W (Tc)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 8-SOP Advance (5x5)
Pakete / Kaso : 8-PowerVDFN

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