NS8KTHE3_A/P Pagpepresyo (USD) [3177pcs Stock]
- 1,000 pcs$0.26162
- Bilang ng Bahagi:
- NS8KTHE3_A/P
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 800V 8A TO220AC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Zener - Arrays, Thyristors - DIACs, SIDACs, Transistor - IGBTs - Arrays, Mga Transistor - FET, MOSFET - RF, Diode - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division NS8KTHE3_A/P electronic components. NS8KTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NS8KTHE3_A/P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NS8KTHE3_A/P Mga katangian ng produkto
Bilang ng Bahagi :
NS8KTHE3_A/P
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 800V 8A TO220AC
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Obsolete
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
800V
Kasalukuyang - Average na Rectified (Io) :
8A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.1V @ 8A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 800V
Capacitance @ Vr, F :
55pF @ 4V, 1MHz
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-220-2
Package ng Tagabigay ng Device :
TO-220AC
Operating temperatura - Junction :
-55°C ~ 150°C
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