Toshiba Semiconductor and Storage - RN2905FE,LF(CT

KEY Part #: K6529294

RN2905FE,LF(CT Pagpepresyo (USD) [1936260pcs Stock]

  • 1 pcs$0.01910

Bilang ng Bahagi:
RN2905FE,LF(CT
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
TRANS 2PNP PREBIAS 0.1W ES6.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Transistor - Programmable Unijunction, Mga module ng Power driver, Transistors - IGBTs - Single, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Single, Mga Transistor - Bipolar (BJT) - RF and Diode - Zener - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage RN2905FE,LF(CT electronic components. RN2905FE,LF(CT can be shipped within 24 hours after order. If you have any demands for RN2905FE,LF(CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2905FE,LF(CT Mga katangian ng produkto

Bilang ng Bahagi : RN2905FE,LF(CT
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : TRANS 2PNP PREBIAS 0.1W ES6
Serye : -
Katayuan ng Bahagi : Active
Uri ng Transistor : 2 PNP - Pre-Biased (Dual)
Kasalukuyang - Kolektor (Ic) (Max) : 100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Kasalukuyang - Collector Cutoff (Max) : 100nA (ICBO)
Dalas - Paglilipat : 200MHz
Kapangyarihan - Max : 100mW
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SOT-563, SOT-666
Package ng Tagabigay ng Device : ES6

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