[3278pcs Stock]
- Bilang ng Bahagi:
- IXTD4N80P-3J
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 800.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Thyristors - Mga SCR, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Arrays, Diode - Zener - Arrays and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTD4N80P-3J electronic components. IXTD4N80P-3J can be shipped within 24 hours after order. If you have any demands for IXTD4N80P-3J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD4N80P-3J Mga katangian ng produkto
Bilang ng Bahagi :
IXTD4N80P-3J
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 800
Serye :
PolarHV™
Katayuan ng Bahagi :
Last Time Buy
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.4 Ohm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
14.2nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
750pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
100W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Die
Pakete / Kaso :
Die
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