TK39N60W,S1VF Pagpepresyo (USD) [8991pcs Stock]
- 1 pcs$5.04161
- 30 pcs$4.13406
- 120 pcs$3.73078
- 510 pcs$3.12580
- Bilang ng Bahagi:
- TK39N60W,S1VF
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N CH 600V 38.8A TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Thyristors - DIACs, SIDACs, Transistor - IGBTs - Mga Module, Diode - Rectifiers - Arrays, Transistor - Programmable Unijunction, Transistor - IGBTs - Arrays, Mga Transistor - JFET and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK39N60W,S1VF electronic components. TK39N60W,S1VF can be shipped within 24 hours after order. If you have any demands for TK39N60W,S1VF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK39N60W,S1VF Mga katangian ng produkto
Bilang ng Bahagi :
TK39N60W,S1VF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N CH 600V 38.8A TO247
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
38.8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 19.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 300V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
270W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247
Pakete / Kaso :
TO-247-3
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