RGF1JHE3/5CA Pagpepresyo (USD) [506068pcs Stock]
- 1 pcs$0.07309
- 6,500 pcs$0.06624
- Bilang ng Bahagi:
- RGF1JHE3/5CA
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 600V 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 600 Volt 250ns 30 Amp IFSM
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Mga module ng Power driver, Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division RGF1JHE3/5CA electronic components. RGF1JHE3/5CA can be shipped within 24 hours after order. If you have any demands for RGF1JHE3/5CA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGF1JHE3/5CA Mga katangian ng produkto
Bilang ng Bahagi :
RGF1JHE3/5CA
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 600V 1A DO214BA
Serye :
SUPERECTIFIER®
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
600V
Kasalukuyang - Average na Rectified (Io) :
1A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.3V @ 1A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
250ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 600V
Capacitance @ Vr, F :
8.5pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-214BA
Package ng Tagabigay ng Device :
DO-214BA (GF1)
Operating temperatura - Junction :
-65°C ~ 175°C
Pinakabagong Balita
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