[12753pcs Stock]
- Bilang ng Bahagi:
- IRF7459TR
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V 12A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Mga Module, Mga module ng Power driver, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF7459TR electronic components. IRF7459TR can be shipped within 24 hours after order. If you have any demands for IRF7459TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7459TR Mga katangian ng produkto
Bilang ng Bahagi :
IRF7459TR
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 20V 12A 8-SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.8V, 10V
Rds On (Max) @ Id, Vgs :
9 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
2480pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SO
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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