Infineon Technologies - IPB120N06S402ATMA2

KEY Part #: K6418193

IPB120N06S402ATMA2 Pagpepresyo (USD) [55191pcs Stock]

  • 1 pcs$0.70845
  • 1,000 pcs$0.59845

Bilang ng Bahagi:
IPB120N06S402ATMA2
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 60V 120A TO263-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Diode - Zener - Arrays and Transistor - Programmable Unijunction ...
Kumpetensyang Pakinabang:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB120N06S402ATMA2 Mga katangian ng produkto

Bilang ng Bahagi : IPB120N06S402ATMA2
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 60V 120A TO263-3
Serye : Automotive, AEC-Q101, OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 15750pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 188W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PG-TO263-3-2
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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