[14082pcs Stock]
- Bilang ng Bahagi:
- HUF75329D3S
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 55V 20A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - IGBTs - Mga Module, Mga Transistor - FET, MOSFET - RF, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Diode - Zener - Arrays, Transistors - IGBTs - Single and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor HUF75329D3S electronic components. HUF75329D3S can be shipped within 24 hours after order. If you have any demands for HUF75329D3S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HUF75329D3S Mga katangian ng produkto
Bilang ng Bahagi :
HUF75329D3S
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 55V 20A DPAK
Serye :
UltraFET™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 20V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
128W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252AA
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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