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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  1. Bahay
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  4. Diode - Rectifiers - Single
  5. 1N649-1

Microsemi Corporation - 1N649-1

KEY Part #: K6442277

1N649-1 Pagpepresyo (USD) [23205pcs Stock]

  • 1 pcs$1.99637
  • 10 pcs$1.78175
  • 25 pcs$1.60344
  • 100 pcs$1.46088
  • 250 pcs$1.31833
  • 500 pcs$1.18294
  • 1,000 pcs$0.94649
Bilang ng Bahagi:
1N649-1
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 400MA DO35.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga module ng Power driver, Diode - Zener - Arrays, Diode - Mga Rectifier ng Bridge and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation 1N649-1 electronic components. 1N649-1 can be shipped within 24 hours after order. If you have any demands for 1N649-1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N649-1 Mga katangian ng produkto

Bilang ng Bahagi : 1N649-1
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE GEN PURP 600V 400MA DO35
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 400mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 400mA
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 50nA @ 600V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-204AH, DO-35, Axial
Package ng Tagabigay ng Device : DO-35
Operating temperatura - Junction : -65°C ~ 175°C

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