Taiwan Semiconductor Corporation - MURF8L60HC0G

KEY Part #: K6428700

MURF8L60HC0G Pagpepresyo (USD) [312570pcs Stock]

  • 1 pcs$0.11833

Bilang ng Bahagi:
MURF8L60HC0G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 8A ITO220AC.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Bipolar (BJT) - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation MURF8L60HC0G electronic components. MURF8L60HC0G can be shipped within 24 hours after order. If you have any demands for MURF8L60HC0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURF8L60HC0G Mga katangian ng produkto

Bilang ng Bahagi : MURF8L60HC0G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 600V 8A ITO220AC
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 8A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.3V @ 8A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 65ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-220-2 Full Pack
Package ng Tagabigay ng Device : ITO-220AC
Operating temperatura - Junction : -55°C ~ 175°C

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