ON Semiconductor - FQP7N80

KEY Part #: K6410380

[14155pcs Stock]


    Bilang ng Bahagi:
    FQP7N80
    Tagagawa:
    ON Semiconductor
    Detalyadong Paglalarawan:
    MOSFET N-CH 800V 6.6A TO-220.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - JFET, Diode - Rectifiers - Single, Mga Transistor - Bipolar (BJT) - RF and Diode - Mga Rectifier ng Bridge ...
    Kumpetensyang Pakinabang:
    We specialize in ON Semiconductor FQP7N80 electronic components. FQP7N80 can be shipped within 24 hours after order. If you have any demands for FQP7N80, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQP7N80 Mga katangian ng produkto

    Bilang ng Bahagi : FQP7N80
    Tagagawa : ON Semiconductor
    Paglalarawan : MOSFET N-CH 800V 6.6A TO-220
    Serye : QFET®
    Katayuan ng Bahagi : Obsolete
    Uri ng FET : N-Channel
    Teknolohiya : MOSFET (Metal Oxide)
    Drain sa Source Voltage (Vdss) : 800V
    Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6.6A (Tc)
    Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 3.3A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 52nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 1850pF @ 25V
    Tampok ng FET : -
    Power Dissipation (Max) : 167W (Tc)
    Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
    Uri ng Pag-mount : Through Hole
    Package ng Tagabigay ng Device : TO-220-3
    Pakete / Kaso : TO-220-3

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