Microsemi Corporation - APTM120DA30T1G

KEY Part #: K6396577

APTM120DA30T1G Pagpepresyo (USD) [2343pcs Stock]

  • 1 pcs$18.48678
  • 100 pcs$18.26704

Bilang ng Bahagi:
APTM120DA30T1G
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
MOSFET N-CH 1200V 31A SP1.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Single, Transistor - Espesyal na Pakay, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Diode - Mga Rectifier ng Bridge, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation APTM120DA30T1G electronic components. APTM120DA30T1G can be shipped within 24 hours after order. If you have any demands for APTM120DA30T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM120DA30T1G Mga katangian ng produkto

Bilang ng Bahagi : APTM120DA30T1G
Tagagawa : Microsemi Corporation
Paglalarawan : MOSFET N-CH 1200V 31A SP1
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 31A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 360 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 560nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 14560pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 657W (Tc)
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Chassis Mount
Package ng Tagabigay ng Device : SP1
Pakete / Kaso : SP1

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