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  5. JAN1N4150UR-1

Microsemi Corporation - JAN1N4150UR-1

KEY Part #: K6427238

JAN1N4150UR-1 Pagpepresyo (USD) [50084pcs Stock]

  • 1 pcs$1.35295
Bilang ng Bahagi:
JAN1N4150UR-1
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 50V 200MA DO213AA. Diodes - General Purpose, Power, Switching Switching Diode
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Single, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Transistor - Espesyal na Pakay, Mga Transistor - Bipolar (BJT) - RF and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation JAN1N4150UR-1 electronic components. JAN1N4150UR-1 can be shipped within 24 hours after order. If you have any demands for JAN1N4150UR-1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N4150UR-1 Mga katangian ng produkto

Bilang ng Bahagi : JAN1N4150UR-1
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE GEN PURP 50V 200MA DO213AA
Serye : Military, MIL-PRF-19500/231
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 50V
Kasalukuyang - Average na Rectified (Io) : 200mA (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 200mA
Bilis : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Kasalukuyang - Reverse Leakage @ Vr : 100nA @ 50V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-213AA
Package ng Tagabigay ng Device : DO-213AA
Operating temperatura - Junction : -65°C ~ 175°C

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