Microsemi Corporation - JAN1N4477DUS

KEY Part #: K6479718

JAN1N4477DUS Pagpepresyo (USD) [2969pcs Stock]

  • 1 pcs$14.58867
  • 100 pcs$13.48736

Bilang ng Bahagi:
JAN1N4477DUS
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE ZENER 33V 1.5W D-5A. Zener Diodes Zener Diodes
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistor - IGBTs - Mga Module and Transistor - Mga FET, MOSFET - Single ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation JAN1N4477DUS electronic components. JAN1N4477DUS can be shipped within 24 hours after order. If you have any demands for JAN1N4477DUS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N4477DUS Mga katangian ng produkto

Bilang ng Bahagi : JAN1N4477DUS
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE ZENER 33V 1.5W D-5A
Serye : Military, MIL-PRF-19500/406
Katayuan ng Bahagi : Active
Boltahe - Zener (Nom) (Vz) : 33V
Toleransa : ±1%
Kapangyarihan - Max : 1.5W
Impedance (Max) (Zzt) : 25 Ohms
Kasalukuyang - Reverse Leakage @ Vr : 50nA @ 26.4V
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 200mA
Temperatura ng pagpapatakbo : -65°C ~ 175°C
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SQ-MELF, A
Package ng Tagabigay ng Device : D-5A

Maaari ka ring Makisalamuha sa
  • BAW156E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • MMBD1705A

    ON Semiconductor

    DIODE ARRAY GP 30V 50MA SOT23-3.

  • SMBD7000E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • 1SS181,LF

    Toshiba Semiconductor and Storage

    DIODE ARRAY GP 80V 100MA SC59. Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR

  • BAV170E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode Array

  • BAV70E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode 200mA