[541pcs Stock]
- Bilang ng Bahagi:
- SI2308DS-T1-E3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 2A SOT23-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Single, Diode - Zener - Single, Diode - RF, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - Bipolar (BJT) - RF and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI2308DS-T1-E3 electronic components. SI2308DS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2308DS-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2308DS-T1-E3 Mga katangian ng produkto
Bilang ng Bahagi :
SI2308DS-T1-E3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 60V 2A SOT23-3
Serye :
TrenchFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
-
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
160 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1.25W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-23-3 (TO-236)
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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