Infineon Technologies - IPB160N04S4H1ATMA1

KEY Part #: K6402046

IPB160N04S4H1ATMA1 Pagpepresyo (USD) [82489pcs Stock]

  • 1 pcs$0.47401
  • 1,000 pcs$0.43487

Bilang ng Bahagi:
IPB160N04S4H1ATMA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 40V 160A TO263-7.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Thyristors - DIACs, SIDACs, Diode - Zener - Single, Diode - Rectifiers - Arrays, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Single, Thyristors - Mga TRIAC and Mga Transistor - FET, MOSFET - RF ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPB160N04S4H1ATMA1 electronic components. IPB160N04S4H1ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB160N04S4H1ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB160N04S4H1ATMA1 Mga katangian ng produkto

Bilang ng Bahagi : IPB160N04S4H1ATMA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 40V 160A TO263-7
Serye : OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 160A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs : 137nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10920pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 167W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PG-TO263-7-3
Pakete / Kaso : TO-263-7, D²Pak (6 Leads + Tab)

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