NSVMMUN2217LT1G Pagpepresyo (USD) [1499461pcs Stock]
- 1 pcs$0.02467
- 12,000 pcs$0.02193
- Bilang ng Bahagi:
- NSVMMUN2217LT1G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- TRANS PREBIAS NPN 0.246W SOT23.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Mga Module, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Zener - Single, Diode - Rectifiers - Single and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NSVMMUN2217LT1G electronic components. NSVMMUN2217LT1G can be shipped within 24 hours after order. If you have any demands for NSVMMUN2217LT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSVMMUN2217LT1G Mga katangian ng produkto
Bilang ng Bahagi :
NSVMMUN2217LT1G
Tagagawa :
ON Semiconductor
Paglalarawan :
TRANS PREBIAS NPN 0.246W SOT23
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
NPN - Pre-Biased
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
10 kOhms
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 1mA, 10mA
Kasalukuyang - Collector Cutoff (Max) :
500nA
Dalas - Paglilipat :
-
Kapangyarihan - Max :
246mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device :
SOT-23-3 (TO-236)
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