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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  5. 2SK3666-3-TB-E

ON Semiconductor - 2SK3666-3-TB-E

KEY Part #: K6521306

2SK3666-3-TB-E Pagpepresyo (USD) [972762pcs Stock]

  • 1 pcs$0.03821
  • 3,000 pcs$0.03802
Bilang ng Bahagi:
2SK3666-3-TB-E
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
JFET N-CH 10MA 200MW 3CP.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Diode - RF, Diode - Zener - Single, Transistor - Espesyal na Pakay, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga SCR and Transistor - Mga FET, MOSFET - Single ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor 2SK3666-3-TB-E electronic components. 2SK3666-3-TB-E can be shipped within 24 hours after order. If you have any demands for 2SK3666-3-TB-E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SK3666-3-TB-E Mga katangian ng produkto

Bilang ng Bahagi : 2SK3666-3-TB-E
Tagagawa : ON Semiconductor
Paglalarawan : JFET N-CH 10MA 200MW 3CP
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Boltahe - Breakdown (V (BR) GSS) : -
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Drain (Idss) @ Vds (Vgs = 0) : 1.2mA @ 10V
Kasalukuyang Drain (Id) - Max : 10mA
Boltahe - Cutoff (VGS off) @ Id : 180mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds : 4pF @ 10V
Paglaban - RDS (On) : 200 Ohms
Kapangyarihan - Max : 200mW
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device : 3-CP

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