IPP041N12N3GXKSA1 Pagpepresyo (USD) [13572pcs Stock]
- 1 pcs$3.03642
- Bilang ng Bahagi:
- IPP041N12N3GXKSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 120V 120A TO220-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Mga Rectifier ng Bridge, Transistors - IGBTs - Single, Transistor - Programmable Unijunction, Thyristors - DIACs, SIDACs, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - RF and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPP041N12N3GXKSA1 electronic components. IPP041N12N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP041N12N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP041N12N3GXKSA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPP041N12N3GXKSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 120V 120A TO220-3
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
120V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs :
211nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
13800pF @ 60V
Tampok ng FET :
-
Power Dissipation (Max) :
300W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PG-TO220-3
Pakete / Kaso :
TO-220-3
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