1N5407GHB0G Pagpepresyo (USD) [1146094pcs Stock]
- 1 pcs$0.03227
- Bilang ng Bahagi:
- 1N5407GHB0G
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 800V 3A DO201AD.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Diode - RF, Transistor - IGBTs - Mga Module, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation 1N5407GHB0G electronic components. 1N5407GHB0G can be shipped within 24 hours after order. If you have any demands for 1N5407GHB0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N5407GHB0G Mga katangian ng produkto
Bilang ng Bahagi :
1N5407GHB0G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
DIODE GEN PURP 800V 3A DO201AD
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
800V
Kasalukuyang - Average na Rectified (Io) :
3A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1V @ 3A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 800V
Capacitance @ Vr, F :
25pF @ 4V, 1MHz
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
DO-201AD, Axial
Package ng Tagabigay ng Device :
DO-201AD
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
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