Bilang ng Bahagi :
SI4833BDY-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET P-CHANNEL 30V 4.6A 8SOIC
Katayuan ng Bahagi :
Obsolete
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
68 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 15V
Tampok ng FET :
Schottky Diode (Isolated)
Power Dissipation (Max) :
2.75W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SOIC
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)