GA20SICP12-247 Pagpepresyo (USD) [13463pcs Stock]
- 250 pcs$19.67285
- Bilang ng Bahagi:
- GA20SICP12-247
- Tagagawa:
- GeneSiC Semiconductor
- Detalyadong Paglalarawan:
- TRANS SJT 1200V 45A TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Mga Module, Diode - Zener - Arrays, Thyristors - Mga TRIAC, Diode - Rectifiers - Arrays and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in GeneSiC Semiconductor GA20SICP12-247 electronic components. GA20SICP12-247 can be shipped within 24 hours after order. If you have any demands for GA20SICP12-247, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GA20SICP12-247 Mga katangian ng produkto
Bilang ng Bahagi :
GA20SICP12-247
Tagagawa :
GeneSiC Semiconductor
Paglalarawan :
TRANS SJT 1200V 45A TO247
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
-
Teknolohiya :
SiC (Silicon Carbide Junction Transistor)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
45A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
50 mOhm @ 20A
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
3091pF @ 800V
Tampok ng FET :
-
Power Dissipation (Max) :
282W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247AB
Pakete / Kaso :
TO-247-3
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