1N4448W-HE3-18 Pagpepresyo (USD) [2422835pcs Stock]
- 1 pcs$0.01527
- 10,000 pcs$0.01412
- Bilang ng Bahagi:
- 1N4448W-HE3-18
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Single, Diode - Mga Rectifier ng Bridge, Thyristors - Mga SCR, Transistor - Programmable Unijunction, Transistor - IGBTs - Arrays and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division 1N4448W-HE3-18 electronic components. 1N4448W-HE3-18 can be shipped within 24 hours after order. If you have any demands for 1N4448W-HE3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4448W-HE3-18 Mga katangian ng produkto
Bilang ng Bahagi :
1N4448W-HE3-18
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 75V 150MA SOD123
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
75V
Kasalukuyang - Average na Rectified (Io) :
150mA
Boltahe - Ipasa (Vf) (Max) @ Kung :
720mV @ 5mA
Bilis :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
4ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 75V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOD-123
Package ng Tagabigay ng Device :
SOD-123
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
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