Toshiba Semiconductor and Storage - RN2308(TE85L,F)

KEY Part #: K6526898

[3011pcs Stock]


    Bilang ng Bahagi:
    RN2308(TE85L,F)
    Tagagawa:
    Toshiba Semiconductor and Storage
    Detalyadong Paglalarawan:
    TRANS PREBIAS PNP 0.1W USM.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Arrays, Diode - Rectifiers - Single, Mga Transistor - JFET, Transistor - IGBTs - Mga Module and Transistor - Bipolar (BJT) - Single ...
    Kumpetensyang Pakinabang:
    We specialize in Toshiba Semiconductor and Storage RN2308(TE85L,F) electronic components. RN2308(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2308(TE85L,F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN2308(TE85L,F) Mga katangian ng produkto

    Bilang ng Bahagi : RN2308(TE85L,F)
    Tagagawa : Toshiba Semiconductor and Storage
    Paglalarawan : TRANS PREBIAS PNP 0.1W USM
    Serye : -
    Katayuan ng Bahagi : Active
    Uri ng Transistor : PNP - Pre-Biased
    Kasalukuyang - Kolektor (Ic) (Max) : 100mA
    Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 50V
    Resistor - Base (R1) : 22 kOhms
    Resistor - Emitter Base (R2) : 47 kOhms
    DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
    Kasalukuyang - Collector Cutoff (Max) : 500nA
    Dalas - Paglilipat : 200MHz
    Kapangyarihan - Max : 100mW
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : SC-70, SOT-323
    Package ng Tagabigay ng Device : USM

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