FZ1800R12HE4B9HOSA2 Pagpepresyo (USD) [100pcs Stock]
- 1 pcs$356.01893
- Bilang ng Bahagi:
- FZ1800R12HE4B9HOSA2
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MODULE IGBT IHMB190-2.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Thyristors - Mga SCR, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Arrays, Transistor - Mga FET, MOSFET - Single and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies FZ1800R12HE4B9HOSA2 electronic components. FZ1800R12HE4B9HOSA2 can be shipped within 24 hours after order. If you have any demands for FZ1800R12HE4B9HOSA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FZ1800R12HE4B9HOSA2 Mga katangian ng produkto
Bilang ng Bahagi :
FZ1800R12HE4B9HOSA2
Tagagawa :
Infineon Technologies
Paglalarawan :
MODULE IGBT IHMB190-2
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng IGBT :
Trench Field Stop
Pag-configure :
Single Switch
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
2735A
Kapangyarihan - Max :
11000W
Vce (on) (Max) @ Vge, Ic :
2.1V @ 15V, 1800A
Kasalukuyang - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
110nF @ 25V
Input :
Standard
NTC Thermistor :
No
Temperatura ng pagpapatakbo :
-40°C ~ 150°C
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
Module
Pinakabagong Balita
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