Toshiba Semiconductor and Storage - RN1673(TE85L,F)

KEY Part #: K6529773

[2053pcs Stock]


    Bilang ng Bahagi:
    RN1673(TE85L,F)
    Tagagawa:
    Toshiba Semiconductor and Storage
    Detalyadong Paglalarawan:
    TRANS 2NPN PREBIAS 0.3W SM6.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC, Diode - RF, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Single and Mga Transistor - FET, MOSFET - RF ...
    Kumpetensyang Pakinabang:
    We specialize in Toshiba Semiconductor and Storage RN1673(TE85L,F) electronic components. RN1673(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1673(TE85L,F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN1673(TE85L,F) Mga katangian ng produkto

    Bilang ng Bahagi : RN1673(TE85L,F)
    Tagagawa : Toshiba Semiconductor and Storage
    Paglalarawan : TRANS 2NPN PREBIAS 0.3W SM6
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng Transistor : 2 NPN - Pre-Biased (Dual)
    Kasalukuyang - Kolektor (Ic) (Max) : 100mA
    Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 50V
    Resistor - Base (R1) : 47 kOhms
    Resistor - Emitter Base (R2) : -
    DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
    Kasalukuyang - Collector Cutoff (Max) : 100nA (ICBO)
    Dalas - Paglilipat : -
    Kapangyarihan - Max : 300mW
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : SC-74, SOT-457
    Package ng Tagabigay ng Device : SM6

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