ON Semiconductor - MUN5112DW1T1G

KEY Part #: K6530200

[82431pcs Stock]


    Bilang ng Bahagi:
    MUN5112DW1T1G
    Tagagawa:
    ON Semiconductor
    Detalyadong Paglalarawan:
    TRANS 2PNP PREBIAS 0.25W SOT363.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Espesyal na Pakay, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Mga module ng Power driver and Transistor - Bipolar (BJT) - Single ...
    Kumpetensyang Pakinabang:
    We specialize in ON Semiconductor MUN5112DW1T1G electronic components. MUN5112DW1T1G can be shipped within 24 hours after order. If you have any demands for MUN5112DW1T1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MUN5112DW1T1G Mga katangian ng produkto

    Bilang ng Bahagi : MUN5112DW1T1G
    Tagagawa : ON Semiconductor
    Paglalarawan : TRANS 2PNP PREBIAS 0.25W SOT363
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng Transistor : 2 PNP - Pre-Biased (Dual)
    Kasalukuyang - Kolektor (Ic) (Max) : 100mA
    Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 50V
    Resistor - Base (R1) : 22 kOhms
    Resistor - Emitter Base (R2) : 22 kOhms
    DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
    Kasalukuyang - Collector Cutoff (Max) : 500nA
    Dalas - Paglilipat : -
    Kapangyarihan - Max : 250mW
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : 6-TSSOP, SC-88, SOT-363
    Package ng Tagabigay ng Device : SC-88/SC70-6/SOT-363

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