Vishay Semiconductor Diodes Division - S3KHE3/9AT

KEY Part #: K6446889

[1611pcs Stock]


    Bilang ng Bahagi:
    S3KHE3/9AT
    Tagagawa:
    Vishay Semiconductor Diodes Division
    Detalyadong Paglalarawan:
    DIODE GEN PURP 800V 3A DO214AB.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC, Thyristors - Mga SCR, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Zener - Single, Thyristors - DIACs, SIDACs, Diode - Zener - Arrays and Transistor - Mga FET, MOSFET - Arrays ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Semiconductor Diodes Division S3KHE3/9AT electronic components. S3KHE3/9AT can be shipped within 24 hours after order. If you have any demands for S3KHE3/9AT, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    S3KHE3/9AT Mga katangian ng produkto

    Bilang ng Bahagi : S3KHE3/9AT
    Tagagawa : Vishay Semiconductor Diodes Division
    Paglalarawan : DIODE GEN PURP 800V 3A DO214AB
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 800V
    Kasalukuyang - Average na Rectified (Io) : 3A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1.15V @ 2.5A
    Bilis : Standard Recovery >500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 2.5µs
    Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 800V
    Capacitance @ Vr, F : 60pF @ 4V, 1MHz
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : DO-214AB, SMC
    Package ng Tagabigay ng Device : DO-214AB (SMC)
    Operating temperatura - Junction : -55°C ~ 150°C

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