FF200R12KT4HOSA1 Pagpepresyo (USD) [883pcs Stock]
- 1 pcs$52.62862
- Bilang ng Bahagi:
- FF200R12KT4HOSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- IGBT MODULE 1200V 200A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Diode - RF, Transistor - Bipolar (BJT) - Arrays and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies FF200R12KT4HOSA1 electronic components. FF200R12KT4HOSA1 can be shipped within 24 hours after order. If you have any demands for FF200R12KT4HOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FF200R12KT4HOSA1 Mga katangian ng produkto
Bilang ng Bahagi :
FF200R12KT4HOSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
IGBT MODULE 1200V 200A
Serye :
C
Katayuan ng Bahagi :
Active
Uri ng IGBT :
Trench Field Stop
Pag-configure :
Half Bridge
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
320A
Kapangyarihan - Max :
1100W
Vce (on) (Max) @ Vge, Ic :
2.15V @ 15V, 200A
Kasalukuyang - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
14nF @ 25V
Input :
Standard
NTC Thermistor :
No
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
Module
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
VS-ENQ030L120S
Vishay Semiconductor Diodes Division
IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology
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